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MMRF1008H Datasheet(PDF) 7 Page - NXP Semiconductors

Part # MMRF1008H
Description  RF Power Field Effect Transistors
PDF  19 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1008H Datasheet(HTML) 7 Page - NXP Semiconductors

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MMRF1008H MMRF1008HS MMRF1008GH
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
6
0
400
03
1
200
100
Pin, INPUT POWER (WATTS) PEAK
Figure 10. Output Power versus Input Power
24
300
5
TC =--30_C
VDD =50 Vdc,IDQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
85_C
55_C
25_C
16
24
50
24
72
100
60
48
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency versus
Output Power
D
22
400
25_C
TC =--30_C
85_C
36
20
18
55_C
VDD =50 Vdc,IDQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Gps
--30_C
25_C
55_C
85_C
250
109
90
108
107
105
110
130
150
170
190
210
230
106
250
90
TJ, JUNCTION TEMPERATURE (C)
Figure 12. MTTF versus Junction Temperature — Pulse
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 275 W Peak, Pulse Width = 128 sec,
Duty Cycle = 10%, and D = 65.5%.
110
130
150
170
190
210
230



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