MMRF1306H datasheet(1/14 Pages) NXP

Part #	MMRF1306H

Description	RF Power LDMOS Transistors

PDF	14 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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MMRF1306HR5 MMRF1306HSR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR CW or

pulse applications, such as HF, VHF, and low--band UHF radar and high power

radio communications. They are unmatched input and output designs allowing

wide frequency utilization from 1.8 to 600 MHz.

 Typical Performance: VDD =50 Vdc,IDQ = 100 mA

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

D

(%)

Pulse

(100 sec, 20% Duty Cycle)

1250 Peak

230

24.0

74.0

CW

1250 CW

230

22.9

74.6

Application Circuits (1) — Typical Performance

Frequency

(MHz)

Signal Type

Pout

(W)

Gps

(dB)

D

(%)

27

CW

1300

27

81

40

CW

1300

26

85

81.36

CW

1250

27

84

87.5--108

CW

1100

24

80

144--148

CW

1250

26

78

170--230

DVB--T

225

25

30

352

Pulse

(200 sec,

20% Duty Cycle)

1250

21.5

66

352

CW

1150

20.5

68

500

CW

1000

18

58

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

Pout

(W)

Test

Voltage

Result

230

Pulse

(100 sec, 20%

Duty Cycle)

>65:1 at all

Phase Angles

1500 Peak

(3 dB

Overdrive)

50

No Device

Degradation

Features

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Device can be used Single--Ended or in a Push--Pull Configuration

 Qualified Up to a Maximum of 50 VDD Operation

 Characterized from 30 V to 50 V for Extended Power Range

 Suitable for Linear Application with Appropriate Biasing

 Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Document Number: MMRF1306H

Rev. 1, 8/2014

Freescale Semiconductor

Technical Data

1.8–600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

MMRF1306HR5

MMRF1306HSR5

Figure 1. Pin Connections

NI--1230H--4S

MMRF1306HR5

NI--1230S--4S

MMRF1306HSR5

Note: The backside of the package is the

source terminal for the transistors.

(Top View)

Drain A

31

42 Drain B

Gate A

Gate B

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