MMRF1312GS datasheet(6/15 Pages) NXP

6 / 15 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1312H MMRF1312HS MMRF1312GS

TYPICAL CHARACTERISTICS — 1030 MHz

NARROWBAND PRODUCTION TEST FIXTURE

Pout, OUTPUT POWER (WATTS) PEAK

Figure 6. Power Gain and Drain Efficiency

versus Output Power

100

D

1000

Gps

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

P3dB

(W)

Pin, INPUT POWER (dBm) PEAK

Figure 7. Output Power versus Input Power

1030

1002

1115

(MHz)

P1dB

(W)

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 8. Power Gain versus Output Power

1000

300 mA

VDD = 50 Vdc, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

100 mA

500 mA

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 9. Power Gain versus Output Power

1000

VDD =30 V

IDQ(A + B) = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

35 V

40 V

45 V

50 V

Pin, INPUT POWER (dBm) PEAK

Figure 10. Output Power versus Input Power

TC = –40_C

VDD =50 Vdc,IDQ(A=B) = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

25_C

200

400

600

800

1000

1200

1400

25_C

85_C

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 11. Power Gain and Drain Efficiency versus

Output Power

D

1000

85_C

TC = –40_C

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

25_C

Gps

85_C

25_C

IDQ(A+B) = 700 mA

TC = –40_C

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