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IRHM3Z60 Datasheet(PDF) 2 Page - International Rectifier |
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IRHM3Z60 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page ![]() 2 www.irf.com IRHM7Z60 Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 35* ISM Pulse Source Current (Body Diode) ➀ — — 140 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 35A, VGS = 0V ➃ trr Reverse Recovery Time — — 220 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 930 µC VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.50 RthCS Case-to-Sink — 0.21 — RthJA Junction-to-Ambient — — 48 Typical Socket Mount Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.02 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.014 VGS = 12V, ID = 35A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 21 — — S ( )VDS > 15V, IDS = 35A ➃ IDSS Zero Gate Voltage Drain Current — — 25 VDS= 24V ,VGS=0V — — 250 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 421 VGS =12V, ID = 35A Qgs Gate-to-Source Charge — — 104 nC VDS = 15V Qgd Gate-to-Drain (‘Miller’) Charge — — 115 td(on) Turn-On Delay Time — — 32 VDD =15V, ID = 35A tr Rise Time — — 370 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 177 tf Fall Time — — 280 LS + LD Total Inductance — 6.8 — Ciss Input Capacitance — 7000 — VGS = 0V, VDS = 25V Coss Output Capacitance — 4800 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 1800 — nA ➃ nH ns µA *Current is limited by the internal wire diameter Ω °C/W Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) |
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