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IRHM4Z60 Datasheet(PDF) 2 Page - International Rectifier

Part # IRHM4Z60
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHM4Z60 Datasheet(HTML) 2 Page - International Rectifier

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IRHM7Z60
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
35*
ISM
Pulse Source Current (Body Diode) ➀
—
—
140
VSD
Diode Forward Voltage
—
—
1.5
V
Tj = 25°C, IS = 35A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
220
nS
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
—
—
930
µC
VDD ≤ 50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
0.50
RthCS
Case-to-Sink
—
0.21
—
RthJA
Junction-to-Ambient
—
—
48
Typical Socket Mount
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
—
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
0.02
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
0.014
VGS = 12V, ID = 35A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
21
—
—
S ( )VDS > 15V, IDS = 35A ➃
IDSS
Zero Gate Voltage Drain Current
—
—
25
VDS= 24V ,VGS=0V
—
—
250
VDS = 24V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
421
VGS =12V, ID = 35A
Qgs
Gate-to-Source Charge
—
—
104
nC
VDS = 15V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
115
td(on)
Turn-On Delay Time
—
—
32
VDD =15V, ID = 35A
tr
Rise Time
—
—
370
VGS =12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
—
—
177
tf
Fall Time
—
—
280
LS + LD
Total Inductance
—
6.8
—
Ciss
Input Capacitance
—
7000
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
4800
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
1800
—
nA
➃
nH
ns
µA
*Current is limited by the internal wire diameter
Ω
°C/W
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)



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