LBS10-13 datasheet(2/5 Pages) DIODES

2 / 5 page

LBS10

Document number: DS38383 Rev. 3 - 2

2 of 5

www.diodes.com

March 2017

LBS10

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VRM

1000

RMS Reverse Voltage

VR(RMS)

700

Average Rectified Output Current

1.0

2t Rating for Fusing (3ms < t < 8.3ms)

3.7

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Case (Note 5)

RθJC

°C/W

Thermal Resistance Junction to Ambient (Note 5)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

1,000

—

IR = 5µA

Forward Voltage Drop (Per Element)

—

0.98

0.88

1.1

—

IF = 1A, TJ = +25°C

IF = 1A, TJ = +125°C

Leakage Current (Note 6) (Per Element)

—

0.2

500

µA

VR = 1,000V, TJ = +25°C

VR = 1,000V, TJ = +125°C

Total Capacitance (Per Element)

—

VR = 4.0VDC, f = 1MHz

Notes:

5. Device mounted on Aluminum substrate with 15mm x 15mm x 1.7mm. Please see http://www.diodes.com/package-outlines.html for the latest version.

6. Short duration pulse test used to minimize self-heating effect.

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