14

RF Device Data

Freescale Semiconductor, Inc.

AFIC901N

TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND TEST FIXTURE

0

03

1

2.5

2

Figure 14. Output Power versus Gate--Source

Voltage, 2nd Stage

24

5

1

0.5

1.5

30

5

--13

Figure 15. Power Gain, Drain Efficiency and Output Power

versus Input Power

--3

--5

--7

–9

--11

15

33

32

27

25

34

31

13

35

28

29

26

25

30

20

50

90

70

30

10

--1

7

f

MHz









520

50.3 + j30.9

84.4 + j93.6

3.5 + j17.8

12.3 + j11.4

= Test circuit impedance as measured from drain to drain.

Figure 16. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

Input

Matching

Network

Stage 1

Interstage

Matching

Network

50 

50 

Stage 2

Output

Matching

Network