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BAV23C Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BAV23C
Description  Small Signal Switching Diode, Dual
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAV23C Datasheet(HTML) 2 Page - Vishay Siliconix

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BAV23C
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 13-Feb-18
2
Document Number: 81902
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Ptot - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - IFSM - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
IR = 100 μA, tp = 300 ms
V(BR)
250
V
Forward voltage
IF = 100 mA
VF
1V
IF = 200 mA
VF
1.25
V
Reverse current
VR = 200 V
IR
100
nA
VR = 200 V, Tj = 150 °C
IR
100
μA
Dynamic forward resistance
IF = 10 mA
rf
5
Diode capacitance
VR = 0 V, f = 1 MHz
CD
5pF
Reverse recovery time
IF = IR = 30 mA, RL = 100 
iR = 3 mA
trr
50
ns
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
Tamb (°C)
100
10
1
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
 
Test pulse tp (s)
T
j = 25 °C - prior to surge



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