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GSD2004S Datasheet(PDF) 2 Page - Vishay Siliconix |
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GSD2004S Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() GSD2004S www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Feb-18 2 Document Number: 85728 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Device on fiberglass substrate LAYOUT FOR RthJA TEST Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage IR = 100 μA VBR 300 V Leakage current VR = 240 V IR 100 nA VR = 240 V, Tj = 150 °C IR 100 μA Forward voltage IF = 20 mA VF 0.83 0.87 V IF = 100 mA VF 1.00 V Diode capacitance VF = VR = 0, f = 1 MHz CD 5.0 pF Reverse recovery time IF = IR = 30 mA, iR = 3.0 mA, RL = 100 trr 50 ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) |
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