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C3025 Datasheet(PDF) 1 Page - IMP, Inc |
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C3025 Datasheet(HTML) 1 Page - IMP, Inc |
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1 / 2 page  93 © IMP, Inc. Process C3025 CMOS 3 µm 10 Volt Analog N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTN 0.65 0.85 1.05 V 100x4 µm Body Factor γ N 0.87 V1/2 100x4 µm Conduction Factor βN 40 48 56 µA/V2 100x100 µm Effective Channel Length LeffN 3.05 3.40 3.75 µm 100x4 µm Width Encroachment ∆WN 0.550 µm Per side Punch Through Voltage BVDSSN 16.5 V Poly Field Threshold Voltage VTFP(N) 12 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTP –0.7 –0.9 –1.1 V 100x4 µm Body Factor γ P 0.75 V1/2 100x4 µm Conduction Factor βP 13 16 19 µA/V2 100x100 µm Effective Channel Length LeffP 3.00 3.35 3.70 µm 100x4 µm Width Encroachment ∆WP 0.8 µm Per side Punch Through Voltage BVDSSP –16.5 V Poly Field Threshold Voltage VTFP(P) –12 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet Resistance ρ P-well(f) 3.25 5.25 7.25 K Ω/ P-well N+ Sheet Resistance ρ N+ 13 20 27 Ω/ N+ Junction Depth xjN+ 0.8 µm P+ Sheet Resistance ρ P+ 50 80 100 Ω/ P+ Junction Depth xjP+ 0.7 µm Gate Oxide Thickness TGOX 45 48 51 nm Interpoly Oxide Thickness TP1P2 56 66 76 nm Gate Poly Sheet Resistance ρ POLY1 15 22 30 Ω/ Bottom Poly Sheet Res. ρ POLY2 15 22 30 Ω/ Metal-1 Sheet Resistance ρ M1 50 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide COX 0.68 0.72 0.78 fF/ µm2 Metal-1 to Poly-1 CM1P 0.047 0.0523 0.0575 fF/ µm2 Metal-1 to Silicon CM1S 0.027 0.30 0.034 fF/ µm2 Poly-1 to Poly-2 CP1P2 0.453 0.523 0.617 fF/ µm2 Electrical Characteristics T=25oC Unless otherwise noted ISO 9001 Registered ® |
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