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DS3906 Datasheet(PDF) 3 Page - Maxim Integrated Products |
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DS3906 Datasheet(HTML) 3 Page - Maxim Integrated Products |
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3 / 14 page ![]() Triple NV Low Step Size Variable Resistor Plus Memory _____________________________________________________________________ 3 NONVOLATILE MEMORY CHARACTERISTICS (VCC = +2.7V to 5.5V) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS EEPROM Writes 0°C to +70°C. The room temperature specification is at least 4x better than specification over 0°C to +70°C. 50,000 AC ELECTRICAL CHARACTERISTICS (See Figure 2) (VCC = +2.7V to 5.5V, TA = -40°C to +85°C, unless otherwise noted. Timing referenced to VIL(MAX) and VIH(MIN).) Note 1: All voltages referenced to ground. Note 2: ISTBY is specified with SDA = SCL = VCC, resistor pins floating, and inputs tied to VCC or GND. Note 3: The DS3906 will not obstruct the SDA and SCL lines if VCC is switched off as long as the voltages applied to these input do not violate their minimum and maximum input voltage levels. Note 4: Tested with external resistor of 87 Ω for R0 and R1 and 258Ω for R2 at 25°C. Note 5: Timing shown is for fast mode (400kHz) operation. This device is also backward compatible with I 2C standard mode timing. Note 6: CB ⎯total capacitance of one bus line in picofarads. Note 7: The EEPROM write time begins after a stop condition occurs. Note 8: Guaranteed by design. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SCL Clock Frequency fSCL (Note 5) 0 400 kHz Bus Free Time Between Stop and Start Conditions tBUF 1.3 µs Hold Time (Repeated) Start Condition tHD:STA 0.6 µs Low Period of SCL tLOW 1.3 µs High Period of SCL tHIGH 0.6 µs Data Hold Time tHD:DAT 0 0.9 µs Data Set-up Time tSU:DAT 100 ns Start Set-up time tSU:STA 0.6 µs SDA and SCL Rise Time tR (Note 6) 20 + 0.1CB 300 ns SDA and SCL Fall Time tF (Note 6) 20 + 0.1CB 300 ns Stop Set-up Time tSU:STO 0.6 µs SDA and SCL Capacitive Loading CB (Note 6) 400 pF EEPROM Write Time tWR (Note 7) 20 ms |
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