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ECG012 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # ECG012
Description  0.1 Watt, High Linearity InGaP HBT Amplifier
PDF  5 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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ECG012 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 April 2005
ECG012
0.1 Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge TM
Product Features
x 60 – 2500 MHz
x +20 dBm P1dB
x +36 dBm Output IP3
x 14 dB Gain @ 900 MHz
x 12.5 dB Gain @ 1900 MHz
x Single Positive Supply (+3V)
x Available in a lead-free / green
SOT-89 Package Style
Applications
x Final stage amplifiers for Repeaters
x Mobile Infrastructure
x CATV / DBS
x Defense / Homeland Security
Product Description
The ECG012 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance across a broad
range with +36 dBm OIP3 and +20 dBm of compressed
1dB power. It is housed in a lead-free/green/RoHS-
compliant SOT-89 SMT package. All devices are 100%
RF and DC tested.
The ECG012 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECG012 to maintain high linearity over temperature and
operate directly off a single +3 V supply.
This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
Function
Pin No.
Input
1
Output/Bias
3
Ground
2, 4
Specifications (1)
Parameters
Units
Min
Typ Max
Operational Bandwidth
MHz
60
2500
Test Frequency
MHz
1900
Gain
dB
11
12.5
Input Return Loss
dB
15
Output Return Loss
dB
10
Output P1dB
dBm
+20
Output IP3 (2)
dBm
+36
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+13
Noise Figure
dB
4.9
Operating Current Range
mA
65
100
145
Device Voltage
V
+3
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +3 V, in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
qC
Storage Temperature
-65 to +150
qC
RF Input Power (continuous)
+15 dBm
Device Voltage
+6 V
Device Current
220 mA
Junction Temperature
+250
qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (3)
Parameters
Units
Typical
Frequency
MHz
900
1900
2140
S21 - Gain
dB
14
12.5
11.5
S11 - Input R.L.
dB
-14
-15
-15
S22 - Output R.L.
dB
-10
-10
-10
Output P1dB
dBm
+20
+20
+20
Output IP3
dBm
+35
+36
+36
Noise Figure
dB
4.7
4.9
5.4
Supply Bias
+3 V @ 100 mA
3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +3 V, I =
100 mA, +25 C
Ordering Information
Part No.
Description
ECG012B
0.1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOT-89 Pkg)
ECG012B-G
0.1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
ECG012B-PCB900 900 MHz Evaluation Board
ECG012B-PCB1900 1900 MHz Evaluation Board
ECG012B-PCB2140 2140 MHz Evaluation Board


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