SiDR402DP

www.vishay.com

Vishay Siliconix

S17-1076-Rev. A, 10-Jul-17

1

Document Number: 75606

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

N-Channel 40 V (D-S) MOSFET

FEATURES

• Top side cooling feature provides additional

venue for thermal transfer

• Material categorization: for definitions of compliance

APPLICATIONS

• Synchronous rectification

•OR-ing

• High power density DC/DC

• Motor drive control

• Battery management

•Load switch

Notes

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

g. Package limited

PRODUCT SUMMARY

40

0.00088

0.00116

53

100

Configuration

Single

SO-8DC

Top View

S

1

6.15

mm

5.15

mm

Bottom View

2

S

3

S

4

G

1

S

D

7

D

6

D

5

D

8

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8DC

Lead (Pb)-free and halogen-free

SiDR402DP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

40

V

Gate-source voltage

+20, -16

A

Pulsed drain current (t = 100 μs)

400

Continuous source-drain diode current

Single pulse avalanche current

L = 0.1 mH

50

Single pulse avalanche Energy

125

mJ

Maximum power dissipation

125

W

80

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

≤ 10 s

15

20

°C/W

Maximum junction-to-case (drain)

Steady state

0.8

1

Maximum junction-to-case (source)

Steady state

1.1

1.4