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MSK3014 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK3014 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 5 page  VGS=0 ID=0.25mA (All Transistors) VDS=100V VGS=0V (Q2,Q3) VDS=-100V VGS=0V (Q1,Q4) VGS=±20V VDS=0 (All Transistors) VDS=VGS ID=250µA (Q2,Q3) VDS=VGS ID=250µA (Q1,Q4) VGS=10V ID=9.0A (Q2,Q3) VGS=-10V ID=-8.4A (Q1,Q4) VGS=10V ID=9.0A (Q2,Q3) VGS=10V ID=-8.4A (Q1,Q4) VDS=50V ID=9.0A (Q2,Q3) VDS=-50V ID=-8.4A (Q1,Q4) ID=9.0A VDS=80V VGS=10V VDD=50V ID=9.0A RG=12Ω RD=5.5Ω VGS=0V VDS=25V f=1.0MHz ID=-8.4A VDS=-80V VGS=-10V VDD=-50V ID=-8.4A RG=9.1Ω RD=6.2Ω VGS=0V VDS=-25V f=1.0MHz IS=9.0A VGS=0V (Q2,Q3) IS=-8.4A VGS=0V (Q1,Q4) IS=9.0A di/dt=100A/µS (Q2,Q3) IS=-8.4A di/dt=100A/µS (Q1,Q4) IS=9.0A di/dt=100A/µS (Q2,Q3) IS=-8.4A di/dt=100A/µS (Q1,Q4) ABSOLUTE MAXIMUM RATINGS 1 2 3 4 Drain-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance Drain-Source On Resistance Forward Transconductance Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Drain-Source Breakdown Voltage Gate-Source Leakage Current N-Channel (Q2,Q3) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance P-CHANNEL (Q1,Q3,Q5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BODY DIODE 7.9mJ 7.9mJ +175°C MAX -55°C to +150°C -55°C to +125°C 300°C MAX Single Pulse Avalanche Energy (Q2,Q4,Q6) (Q1,Q3,Q5) Junction Temperature Storage Temperature Case Operating Temperature Range Lead Temperature Range (10 Seconds) Drain to Source Voltage Drain to Gate Voltage (RGS=1MΩ) Gate to Source Voltage (Continuous) Continuous Current Pulsed Current Thermal Resistance (Junction to Case) VDSS VDGDR VGS ID IDM RTH-JC TJ TST TC TLD 100V MAX 100V MAX ±20V MAX 10A MAX 25A MAX 7.9°C/W Parameter Units MSK3014 Test Conditions V µA µA nA V V Ω Ω Ω Ω S S nC nC nC nS nS nS nS pF pF pF nC nC nC nS nS nS nS pF pF pF V V nS nS µC µC Min. 100 - - - 2.0 2.0 - - - - 6.4 3.2 - - - - - - - - - - - - - - - - - - - - - - - - - - Typ. - - - - - - - - - - - - - - - 6.4 27 37 25 640 160 88 - - - 15 58 45 46 760 260 170 1.3 -1.6 130 130 650 650 Max. - 25 -25 ±100 4.0 4.0 0.20 0.28 0.11 0.20 - - 44 6.2 21 - - - - - - - 58 8.3 32 - - - - - - - - - 190 190 970 970 ELECTRICAL SPECIFICATIONS 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 NOTES: This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. TA=25°C unless otherwise specified. 4 Rev. B 7/00 2 |
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