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MPKC2SB Datasheet(PDF) 1 Page - MagnaChip Semiconductor. |
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MPKC2SB Datasheet(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 5 page ![]() Mar. 2013.Version 2.0 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Conditions Symbol Rating Unit Repetitive Peak Reverse Voltage VRRM 600 V Reverse DC Voltage VR(DC) 480 V Average Forward Current TC=25 oC Resistive Load IF(AV) 300 A TC=100 oC 150 A Surge(non-repetitive) Forward Current One Half Cycle at 60Hz, Peak Value IFSM 2750 A I 2t for Fusing Value for One Cycle Current, tw = 8.3ms, Tj= 25℃ Start I 2t 31.3* 10 3 A 2s Junction Temperature TJ -40 ~ 150 ℃ Maximum Power Dissipation PD 520 W Isolation Voltage @AC 1 minutes Visol 2500 V Storage Temperature Tstg -40 ~ 150 ℃ Mounting Torque - 4.0 N.m Terminal Torque Typical Including Screws - 3.0 N.m Weight - 180 g Product Name MPKC2SB150U60 MPKC2CB150U60 Optional Information Side Common & P-type Center Common & P-type MPKC2SB/CB150U60 600V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, Motors drives and other applications where switching losses are significant portion of the total losses. Features Repetitive Reverse Voltage : VRRM= 600V Low Forward Voltage : VF(typ.) = 1.45V Average Forward Current : IF(Av.)=150A @TC=100℃ Ultra-Fast Reverse Recovery Time : trr(typ.) = 40ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Isolation Type Package Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply Ordering Information E301932 5DM-2 |
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