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PDTC144WM Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PDTC144WM
Description  NPN resistor-equipped transistors; R1 = 47 KOHM, R2 = 22 KOHM
PDF  14 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTC144WM Datasheet(HTML) 5 Page - NXP Semiconductors

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2004 Aug 17
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1=47k
Ω, R2 = 22 kΩ
PDTC144W series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm copper strip line.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
SOT416
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =50V; IE =0A
−−
100
nA
ICEO
collector-emitter cut-off current
VCE =30V; IB =0A
−−
1
µA
VCE =30V; IB = 0 A; Tj = 150 °C
−−
50
µA
IEBO
emitter-base cut-off current
VEB =5V; IC =0A
−−
110
µA
hFE
DC current gain
VCE =5V; IC = 5 mA
60
−−
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−−
150
mV
Vi(off)
input-off voltage
IC = 100 µA; VCE =5V
−
1.7
1.2
V
Vi(on)
input-on voltage
IC = 2 mA; VCE = 0.3 V
4
2.7
−
V
R1
input resistor
33
47
61
k
Ω
resistor ratio
0.37
0.47
0.57
Cc
collector capacitance
IE =ie = 0 A; VCB =10V;
f = 1 MHz
−−
2.5
pF
R2
R1
-------



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