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RF2001T2D Datasheet(PDF) 1 Page - Rohm |
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RF2001T2D Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page ![]() RF2001T2D Diodes 1/3 Fast recovery diode RF2001T2D Applications External dimensions (Unit : mm) Structure General rectification 1.2 1.3 0.8 2.54±0.5 2.54±0.5 (1) (2) (3) 7.2 φ3.1±0.1 φ1.2 7.0±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.015 2.6±0.03 1.1 7.2 7.0 0.8 3-φ1.2 9.9 0.8 10.0 ① ROHM : TO220FN ① Manufacture Date Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 °C) Symbol Unit Symbol Min. Typ. Max. Unit Conditions Forward voltage VF -- 0.93 V IF=10A everse current IR -- 10 µA VR=200V Reverse recovery time trr - - 30 ns IF=0.5A,IR=1A,Irr=0.25*IR Parameter R V V R ) 200 RM VR V Io A IFSM A Tj ℃ Tstg ℃ torage temperature verage rectified forward current (*1) 150 -55 to +150 orward current surge peak (60Hz・1cyc) 20 unction temperature 100 *1) Per chip : Io/2 Parameter everse voltage (DC) everse voltage (repetitive peak Limits 200 S A F J ( R Electrical characteristic (Ta=25 °C) |
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