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STGF10NB60SD Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGF10NB60SD
Description  N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF10NB60SD Datasheet(HTML) 1 Page - STMicroelectronics

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June 2003
STGF10NB60SD
N-CHANNEL 10A - 600V TO-220FP
PowerMESH™ IGBT
(q ) Pulse width limited by safe operating area
s
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s
LOW ON-VOLTAGE DROP
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
s
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGF10NB60SD
600
< 1.8 V10 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC =25°C
20
A
IC
Collector Current (continuous) at TC =100°C
10
A
ICM (q)
Collector Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
25
W
Derating Factor
0.2
W/°C
VISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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