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ISCC18141 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCC18141 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCC18141 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) · High Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.39 ℃ /W |
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