ISCD18106 datasheet(2/2 Pages) ISC

Part #	ISCD18106

Description	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

Logo

2 / 2 page

INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Darlington Power Transistor

ISCD18106

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)-1*

Collector-Emitter Saturation Voltage

IC= -2A; IB=- 8mA

-2.0

VCE(sat)-2*

Collector-Emitter Saturation Voltage

IC= -4A; IB=- 40mA

-3.0

VBE(sat)*

Base-Emitter Saturation Voltage

IC=- 4A; IB=- 40mA

-4.0

VBE(on)*

Base-Emitter On Voltage

IC=-2A; VCE=-3V

-2.8

V(BR)CEO

Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

-100

ICBO

Collector Cutoff Current

VCB=- 50V; IE= 0

-20

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2

hFE-1*

DC Current Gain

IC=-0.5A; VCE= -3V

500

hFE-2*

DC Current Gain

IC= -2A; VCE=-3V

12K

hFE-3*

DC Current Gain

IC=- 4A; VCE=-3V

200

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

200

Current-Gain—Bandwidth Product

IC= -0.75A; VCE= -10V

MHz

*:Pulse test PW≤300us,duty cycle≤2%

ISCD18106 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

ISCD18106 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL