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KSH50TF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSH50TF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor KSH50TF DESCRIPTION · High switching speed time · Low collector-to-emitter saturation voltage · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-peak 2 A IB Base Current 0.6 A PC Collector Power Dissipation Ta=25℃ 1.5 W Collector Power Dissipation TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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