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ISCD1889 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCD1889
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCD1889 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCD1889
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)=0.5V(Max) @IC= 1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power Amplifier Applications
·
Power Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current-Continuous
1.5
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃
/W


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