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3DD880 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3DD880 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistors 3DD880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 100 μ A hFE DC Current Gain IC= 0.5A ; VCE= 15V 60 300 hFE Classifications O Y GR 60-120 100-200 150-300 |
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