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TTA1452B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TTA1452B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor TTA1452B DESCRIPTION · High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A · Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse -15 A PC Total Power Dissipation @ Ta=25℃ 2 W PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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