FUSB252 datasheet(7/18 Pages) ONSEMI

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FUSB252 • Rev. 1.5

DC Electrical Characteristics

Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical values are at TA=25°C and

VDD=4.2 V unless otherwise specified.

Symbol

Parameter

VDD (V)

Conditions

TA = -40 to +85°C

TJ=-40 to +125°C

Unit

Min.

Typ.

Max.

Basic Operation Device

ICC

Quiescent Supply Current

2.7 to 5.5

/OE = L, IOUT =0

µA

/OE = H IOUT =0

IOFF

Power-Off Leakage Current

µA

Basic Operation CC switch

ISD(DB)

Dead Battery Supply Current

0 to

UVLO

Dead Battery State Supply

Current

RON

CC Path On Resistance

2.7 to 5.5 IOUT = 200 mA

350

480

mΩ

VOV_TRIP

Input OVP Lockout

2.7 to 5.5

VICC Rising

5.65

6.20

VICC Falling

5.3

VOV_HYS

Input OVP Hysteresis

2.7 to 5.5

0.35

VUVLO

Under-Voltage Lockout

2.7 to 5.5

VDD Rising

2.55

2.70

VDD Falling

2.5

TSD

Thermal Shutdown

(1)

Shutdown Threshold

150

°C

Return from Shutdown

130

Hysteresis

Dead Battery Pull-Down

Resistance

0 to

UVLO

Dead Battery Resistance

4.08

5.10

6.12

kΩ

Voltage on Pin

0.25

2.6

Basic Operation HSD Switch

VOV_TRIP

Input OVP Lockout

2.7 to 5.5

VHSD± Rising

4.4

5.0

VHSD± Falling

4.1

VOV_HYS

Input OVP Hysteresis

2.7 to 5.5

0.3

VUV_TRIP

Input Under-Voltage Lockout 2.7 to 5.5

-1.2

VIH

Input Voltage High

2.7 to 5.5

1.3

VIL

Input Voltage Low

2.7 to 5.5

0.5

IIN

Control Input Leakage

2.7 to 5.5 VSW = 0 to VDD

0.1

µA

IOZ

Off State Leakage

4.2

0≤HSDn ≤3.6 V

µA

4.2

0≤HSD1n±, HSD2n± ≤3.6 V

100

RON

HS Switch On Resistance

4.2

VSW = 0.4 V, ION = -8 mA

ΔRON

HS Delta RON

4.2

VSW = 0.4 V, ION = -8 mA

0.1

Note:

Guaranteed by characterization, not production tested

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