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MBRD20100CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRD20100CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRD20100CT FEATURES · With TO-251(DPKE) package · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss,High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High frequency switching · High efficiency SMPS · Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 135℃ 20 A IFSM Non-repetitive Peak Surge Current 8.3ms half sine wave 120 A TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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