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TPDV840 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TPDV840
Description  isc Triacs
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TPDV840 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  TPDV840 Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website: www.iscsemi.com
isc & iscsemi is registered trademark
isc Triacs
TPDV840
FEATURES
·
With TOP3 insulated package
·
Be suitable for general purpose where high surge current capability is required.
Application such as phase control and tatic switching on inductive or resistive load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
Value
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(RMS)
RMS on-state current (full sine wave)Tc=75℃
40
A
ITSM
Non-repetitive peak on-state
current
tp=2.5ms
590
A
tp=8.3ms
370
tp=10ms
350
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
PG(AV)
Average gate power dissipation(Tj=125℃)
1
W
Rth(j-c)
Thermal resistance, junction to case
1.2
℃
/W
Rth(j-a)
Thermal resistance, junction to ambient
50
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
Tj=25℃
Tj=125℃
0.02
8
mA
IDRM
Repetitive peak off-state current
VR=VRRM,
Tj=25℃
Tj=125℃
0.02
8
mA
IGT
Gate trigger current
Quadrant (I-II-III)
VD=12V; RL= 33Ω
200
mA
VGT
Gate trigger voltage all quadrant
Quadrant(I-II-III)
VD=12V; RL= 33Ω
1.5
V
VTM
On-state voltage
ITM= 60A; tp= 380μs
1.8
V


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