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MHT2000N Datasheet(PDF) 6 Page - NXP Semiconductors |
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MHT2000N Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 21 page ![]() 6 RF Device Data Freescale Semiconductor, Inc. MHT2000NR1 MHT2000GNR1 TYPICAL CHARACTERISTICS — NARROWBAND 100 25 30 0 50 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Power Added Efficiency versus CW Output Power VDD =28 Vdc IDQ1 =55 mA IDQ2 = 195 mA f = 2450 MHz 10 1 29 28 27 26 40 30 20 10 Figure 6. CW Output Power versus Input Power Pin, INPUT POWER (dBm) 20 49 14 48 47 46 41 15 17 16 18 45 19 13 P3dB = 44.9 dBm (30.9 W) P1dB = 44.5 dBm (28.05 W) 44 43 VDD =28 Vdc,IDQ1 =55 mA IDQ2 = 195 mA, f = 2450 MHz 42 Ideal Actual 100 25 30 0 50 Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD1 VD2 =28 Vdc IDQ1 =55 mA IDQ2 = 195 mA f = 2450 MHz 10 0.1 29 28 27 26 40 30 20 10 1 VD1 =32 V 30 V 100 25 30 0 50 Pout, OUTPUT POWER (WATTS) CW Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD2 VD1 =28 Vdc IDQ1 =55 mA IDQ2 = 195 mA f = 2450 MHz 10 0.1 29 28 27 26 40 30 20 10 1 VD2 =28 V 28 V 30 V 32 V 28 V 30 V 32 V |
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