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MHT2012N Datasheet(PDF) 8 Page - NXP Semiconductors |
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MHT2012N Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 14 page ![]() 8 RF Device Data NXP Semiconductors MHT2012N TYPICAL CHARACTERISTICS — 2400–2500 MHz REFERENCE CIRCUIT 14 2400 Gps f, FREQUENCY (MHz) Figure 8. Power Gain, Power Added Efficiency and CW Output Power versus Frequency at a Constant Input Power 27.5 30 13 60 55 50 45 16 15 PAE 29.5 28 2425 2475 Pout 29 28.5 2450 2500 26.5 27 VDD =28 Vdc,Pin =13 dBm,IDQ1 =15 mA, IDQ2 =75 mA Figure 9. Power Gain, Power Added Efficiency and Input Power versus CW Output Power and Frequency Pout, OUTPUT POWER (WATTS) 15 24 21 0 Gps 75 100 25 33 30 27 36 5 50 65 Pin 18 39 42 35 20 50 0 PAE 4 8 12 16 20 2500 MHz 2400 MHz 2400 MHz VDD =28 Vdc,IDQ1 =15 mA, IDQ2 =75 mA 2450 MHz 2500 MHz 2500 MHz 2400 MHz 2450 MHz 2450 MHz |
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