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STW45NM60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STW45NM60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor STW45NM60 · FEATURES · High dv/dt and avalanche capabilities · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Tight process control and high manufacturing yields · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching application · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 45 28 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation 417 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.3 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 30 ℃ /W |
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