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STP6NK90Z Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STP6NK90Z Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor STP6NK90Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 900 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.1mA 3 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.9A 1.56 2 Ω IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 10 μ A IDSS Drain-Source Leakage Current VDS= 900V; VGS= 0V;TJ=25℃ TJ=125℃ 1 50 μ A VSDF Diode forward voltage ISD=5.8A, VGS = 0 V 1.6 V |
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