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2SC4212 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SC4212 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 3 page ![]() Power Transistors 2 2SC4212 VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB Area of safe operation (ASO) 0 6 5 4 3 2 1 0 200 40 80 160 120 180 20 60 140 100 (1)With a 100 ×100×2mm Al heat sink (2)Without heat sink (1) (2) Ambient temperature T a (˚C) 020 48 16 12 0 40 80 120 200 160 TC=25˚C 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA IB=2.0mA Collector to emitter voltage V CE (V) 0 0 2.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 VCE=10V TC=75˚C –25˚C 25˚C Base to emitter voltage V BE (V) 13 10 30 100 0.01 10 1 0.1 0.03 0.3 3 IC/IB=10 –25˚C 25˚C TC=100˚C Collector current I C (mA) 1 10 100 330 1 1000 100 10 3 30 300 VCE=10V TC=100˚C –25˚C 25˚C Collector current I C (mA) –1 –3 –10 –30 –100 –300 –1000 0 40 80 120 200 160 VCB=30V f=200MHz TC=25˚C Emitter current I E (A) 1 3 10 30 100 0 20 16 12 8 4 IE=0 f=1MHz TC=25˚C Collector to base voltage V CB (V) 0.001 0.003 13 0.01 0.03 0.1 0.3 1 3 10 10 30 100 300 1000 Single pulse TC=25˚C t=10ms t=1s DC ICP IC Collector to emitter voltage V CE (V) |
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