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STP105N3LL Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP105N3LL Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor STP105N3LL · FEATURES · Typical RDS(on)=0.0027Ω · With low gate drive requirements · High avalanche ruggedness · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Solenold and relay dirvers · DC-DC &DC-CA converters · Automotive environment · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 150 105 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation 140 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.1 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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