ISCD18143P datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

ISCD18143P

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -8.0A ; IB= -0.8A, L= 1mH

-60

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= -8.0A ; IB1=-IB2= -0.8A,

VBE(OFF)=1.5V, L=180μH,clamped

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -8A; IB= -0.4A

-0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -12A; IB= -0.6A

-0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -8A; IB= -0.4A

-1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -12A; IB= -0.6A

-1.5

ICBO

Collector Cutoff Current

VCB= -60V ; IE=0

-10

ICER

Collector Cutoff Current

VCE= -60V ; RBE= 50Ω,Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -60V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,Ta=125℃

-10

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-10

hFE-1

DC Current Gain

IC= -1.5A; VCE= -2V

100

hFE-2

DC Current Gain

IC= -3.0A; VCE= -2V

100

400

hFE-3

DC Current Gain

IC= -8.0A; VCE= -2V

COB

Output Capacitance

IE=0; VCB= -10V; f= 1.0MHz

300

Current-Gain—Bandwidth Product

IC= -1.5A; VCE= -10V

MHz



hFE-2 Classifications

100-200

150-300

200-400

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