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2SC4529 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SC4529 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
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1 / 3 page  Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 30 V ————————————————————– Collector to emitter voltage VCEO 20 V ————————————————————– Emitter to base voltage VEBO 3V ————————————————————– Collector current IC 300 mA ————————————————————– Collector peak current iC(peak) 500 mA ————————————————————– Collector power dissipation PC 1W ——–———– PC*1 5 ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. 1 2 3 TO-126 MOD 1. Emitter 2. Collector 3. Base Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 30 ——V IC = 100 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 20 ——V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — 1.0 µA VCB = 25 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff Current IEBO — — 10 µA VEB = 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 100 mA, IB = 10 mA ——————————————————————————————————————————— Gain bandwidth product fT 1.5 2.2 — GHz VCE = 5 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 4.7 — pF VCB = 10 V, IE = 0, f = 1 MHz ——————————————————————————————————————————— 2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier |
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