1

Power Transistors

2SC5418

Silicon NPN triple diffusion mesa type

For horizontal deflection output

q

High breakdown voltage, and high reliability through the use of a

glass passivation layer

q

High-speed switching

q

Wide area of safe operation (ASO)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

1700

1700

600

5

30

20

10

100

3.5

150

–55 to +150

Unit

V

V

V

V

A

A

A

W

˚C

˚C

Ta=25

°C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Symbol

Conditions

min

7

typ

3

max

50

1

50

14

3

1.5

4.0

0.3

Unit

µA

mA

µA

V

V

MHz

µs

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3E Full Pack Package

15.5

±0.5

3.0

±0.3

φ3.2±0.1

5.45

±0.3

123

5.45

±0.3

1.1

±0.1

2.0

±0.2

4.0

5

°

5

°

5

°

5

°

5

°

5

°

0.7

±0.1