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ISCD18147 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCD18147 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor ISCD18147 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector- Base Breakdown Voltage IC= 0.1mA ; IE= 0 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 5 µA IEBO Emitter Cutoff Current VEB=5V; IC=0 5 µA hFE DC Current Gain IC= 2A; VCE= 5V 5000 |
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