Transistors

1

Publication date: November 2002

SJC00006BED

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC1573

■ Features

• High collector-emitter voltage (Base open) V

CEO

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−250

V

Collector-emitter voltage (Base open)

−200

V

Emitter-base voltage (Collector open)

−5V

Collector current

−70

mA

Peak collector current

−100

mA

Collector power dissipation

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

= −100 µA, I

B

= 0

−200

V

Emitter-base voltage (Collector open)

−5V

60

220



Collector-emitter saturation voltage

= −50 mA, I

B

= −5 mA

−1.5

V

Transition frequency

50

80

MHz

Collector output capacitance

5

10

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

(1.27)

(1.27)

0.45

+0.2

–0.1

0.45

+0.2

–0.1

13

2

Rank

Q

R

60 to 150

100 to 220

1 : Emitter

2 : Collector

3 : Base

EIAJ : SC-51

TO-92L-A1 Package

Note) The part number in the parenthesis shows conventional part number.