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BLY92C Datasheet(PDF) 1 Page - Advanced Semiconductor |
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BLY92C Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 2.0 mA hFE VCE = 5.0 V IC = 200 mA 35 --- Cob VCB = 30 V f = 1.0 MHz 40 50 pF PG ηηηη C VCC = 28 V POUT = 15 W f = 175 MHz 10 50 11 60 dB % NPN SILICON RF POWER TRANSISTOR BLY92C DESCRIPTION: The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz. FEATURES: • P G = 11 dB Typical at 175 MHz • High Load VSWR Capability • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCB 65 V VCE 35 V VEB 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθθθ JC 4.4 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE ORDER CODE: ASI10758 |
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