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ISCC18155 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCC18155 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor ISCC18155 · FEATURES · Drain Current ID= 45A@ TC=25℃ · Drain Source Voltage- : VDSS=100V(Min) · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching mode power supply · Uninterruptible power supply · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 45 A IDM Pulse Drain Current 130 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.04 ℃ /W |
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