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LE25S20FD Datasheet(PDF) 1 Page - ON Semiconductor |
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LE25S20FD Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 22 page ![]() © Semiconductor Components Industries, LLC, 2017 1 Publication Order Number : February 2017 - Rev. 0 LE25S20FD/D ORDERING INFORMATION See detailed ordering and shipping information on page 22 of this data sheet. www.onsemi.com * This product is licensed from Silicon Storage Technology, Inc. (USA). LE25S20FD Serial Flash Memory 2 Mb (256K x 8) Overview The LE25S20FD is a SPI bus flash memory device with a 2M bit (256K 8- bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity. Features Read/write operations enabled by single 1.8 V power supply : 1.65 to 1.95 V supply voltage range Operating frequency : 40 MHz Temperature range : 40 to 85C Serial interface : SPI mode 0, mode 3 supported Sector size : 4K bytes/small sector, 64K bytes/sector Small sector erase, sector erase, chip erase functions Page program function (256 bytes/page) Block protect function Highly reliable read/write Number of rewrite times : 100,000 times Small sector erase time : 40 ms (typ), 150 ms (max) Sector erase time : 80 ms (typ), 250 ms (max) Chip erase time : 300 ms (typ), 3.0 s (max) Page program time : 3.0 ms / 256 bytes (typ), 3.5 ms/256 bytes (max) Status functions : Ready / busy information, protect information Data retention period : 20 years Package : VSOIC8 NB VSOIC8 NB |
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