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IRHG7110 Datasheet(PDF) 2 Page - International Rectifier |
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IRHG7110 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page ![]() IRHG7110 Pre-Irradiation 2 www.irf.com For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 1.0 ISM Pulse Source Current (Body Diode) ➀ — — 4.0 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.0A, VGS = 0V ➃ trr Reverse Recovery Time — — 110 nS Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 390 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.125 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.7 VGS = 12V, ID = 1.0A Resistance — — 0.6 VGS = 12V, ID = 0.6A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 0.7 — S ( )VDS > 15V, IDS = 0.6A ➃ IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V, VGS= 0V — — 250 VDS = 80V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 11 VGS =12V, ID = 1.0A, Qgs Gate-to-Source Charge — — 3.0 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 4.0 td(on) Turn-On Delay Time — — 20 VDD = 50V, ID = 1.0A, tr Rise Time — — 16 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 65 tf Fall Time — — 45 LS + LD Total Inductance — 10 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 300 — VGS = 0V, VDS = 25V Coss Output Capacitance — 100 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 16 — nA ➃ nH ns µA Ω Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 17 RthJA Junction-to-Ambient — — 90 Typical socket mount °C/W — — |
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