STP62NS04Z datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP62NS04Z

Description	N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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March 2004

.

STP62NS04Z

N-CHANNEL CLAMPED 12.5m

Ω - 62A TO-220

FULLY PROTECTED MESH OVERLAY™ MOSFET

INTERNAL SCHEMATIC DIAGRAM

■

TYPICAL RDS(on) = 0.0125

Ω

■

100% AVALANCHE TESTED

■

LOW CAPACITANCE AND GATE CHARGE

■

175 oC MAXIMUM JUNCTION

TEMPERATURE

DESCRIPTION

This fully clamped Mosfet is produced by using the latest

advanced Company’s Mesh Overlay process which is

based on a novel strip layout.

The inherent benefits of the new technology coupled with

the extra clamping capabilities make this product

particularly suitable for the harshest operation conditions

such

as

those

encountered

in

the

automotive

environment. Any other application requiring extra

ruggedness is also recommended.

APPLICATIONS

■

ABS, SOLENOID DRIVERS

■

POWER TOOLS

Ordering Information

TYPE

VDSS

RDS(on)

ID

STP62NS04Z

CLAMPED

<0.015

Ω

62 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP62NS04Z

P62NS04Z

TO-220

TUBE

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD

≤40A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 20A, VDD= 20V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

CLAMPED

V

VDG

Drain-gate Voltage

CLAMPED

V

VGS

Gate- source Voltage

CLAMPED

V

ID

Drain Current (continuous) at TC = 25°C

62

A

ID

Drain Current (continuous) at TC = 100°C

37.5

A

IDG

Drain Gate Current (continuous)

± 50

mA

IGS

Gate SourceCurrent (continuous)

± 50

mA

IDM(

•)

Drain Current (pulsed)

248

A

Ptot

Total Dissipation at TC = 25°C

110

W

Derating Factor

0.74

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

8

V/ns

EAS (2)

Single Pulse Avalanche Energy

500

mJ

VESD

ESD (HBM - C = 100pF, R=1.5 k

Ω)8

kV

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

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