OP520DA datasheet(2/4 Pages) TTELEC

2 / 4 page

Silicon Photo Darlington in Miniature 1206 SMD

Package

OP520DA, OP521DA

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com

Absolute Maximum RatingsTA = 25o C unless otherwise noted

Storage Temperature Range

-40°C to +100°C

Operating Temperature Range

-25°C to +85°C

Lead Soldering Temperature

260°C(1)

Collector-Emitter Voltage

35V

Collector Current

30 mA

Power Dissipation

100 mW(2)

Emitter-Collector Voltage

5 V

Notes:

Solder time less than 5 seconds at temperature extreme.

De-rate linearly at 2.17 mW/°C above 25°C.

Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than

10% over the entire lens surface of the photo darlington being tested.

To Calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 TA-3/4) where TA is the ambient temperature in °C.

Relative Collector Current-IC (mA)

vs. Irradiance-Ee (mW/cm2)

0.5

1.0

Irradiance- Ee (mW/cm2)

Relative On-State Collector Current

vs. Temperature—(TA)

-25

100

Temperature— TA (

°C)

-40°C

80°C

Issue A

03.08

Page 2 of 4

Electrical Characteristics (TA = 25rC unless otherwise noted)

1.5

90%

100%

110%

120%

130%

80%

70%

140%

2.0

Normalized at Ee = 1mW/cm2

Conditions: VCE = 5V,

= 935nm, TA = 25 °C

Normalized at TA = 25°C .

Conditions: VCE = 5V,

= 935nm, TA = 25 °C

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

CONDITIONS

IC(ON)

On-State Collector Current

10.0

VCE = 5.0V, Ee = 0.5mW/cm2 (3)

VCE(SAT)

Collector-Emitter Saturation Voltage

1.7

IC = 1mA, Ee = 5.0mW/cm2 (3)

ICEO

Collector-Emitter Dark Current

200

VCE = 5.0V, Ee = 0 (4)

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 100µA, Ee = 0

V(BR)ECO

Emitter-Collector Breakdown Voltage

IE = 100µA, Ee = 0

Spectral range of sensitivity

OP521DA

OP520DA

400

700

1100

VCE = 5.0V

tr, tf

Rise and Fall Times

µs

IC = 1mA, RL = 1K

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