VBO72-18NO7

V

=

V

kA²s

kA²s

kA²s

kA²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.08

R

0.9 K/W

R

min.

70

V

100

T

= 25°C

VJ

T

=

°C

VJ

mA

1.5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

110

P

tot

135

W

T

= 25°C

C

R

K/W

0.4

30

1800

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.22

T

= 25°C

VJ

150

V

F0

V

0.78

T

=

°C

VJ

150

6

mΩ

V

0.99

T

=

°C

VJ

I =

A

F

V

30

1.17

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

1800

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

27

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

150

750

810

2.05

1.98

A

A

A

A

640

690

2.82

2.73

1800

DAV

d =

rectangular

0.5

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1900

IXYS reserves the right to change limits, conditions and dimensions.

20130415a

Data according to IEC 60747and per semiconductor unless otherwise specified

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