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LM4908MM Datasheet(PDF) 18 Page - National Semiconductor (TI) |
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LM4908MM Datasheet(HTML) 18 Page - National Semiconductor (TI) |
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18 / 21 page ![]() LM4908 MDC MWC Dual 120MW Headphone Amplifier 20075263 Die Layout (A - Step) DIE/WAFER CHARACTERISTICS Fabrication Attributes General Die Information Physical Die Identification LM4908A Bond Pad Opening Size (min) 70µm x 70µm Die Step A Bond Pad Metalization ALUMINUM Physical Attributes Passivation NITRIDE Wafer Diameter 150mm Back Side Metal BARE BACK Dise Size (Drawn) 889µm x 622µm 35.0mils x 24.5mils Back Side Connection Floating Thickness 216µm Nominal Min Pitch 216µm Nominal Special Assembly Requirements: Note: Actual die size is rounded to the nearest micron. Die Bond Pad Coordinate Locations (A - Step) (Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used SIGNAL NAME PAD# NUMBER X/Y COORDINATES PAD SIZE XYX Y INPUT B+ 1 -367 232 70 x 70 INPUT B- 2 -367 15 70 x 70 OUTPUT B 3 -367 -232 70 x 70 VDD 4 35 -232 155 x 70 OUTPUT A 5 367 -232 70 x 70 INPUT A- 6 367 15 70 x 70 INPUT A+ 7 367 232 70 x 70 GND 8 68 232 155 x 70 www.national.com 18 |
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