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2STW100 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2STW100 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2STW100 DESCRIPTION · With TO-3PN packaging · Very high DC current gain · Monolithic darlington transistor with integrated antiparallel collector-emitter diode · Complement to Type 2STW200 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC-DC motor control · Electronic ignition · Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current- Continuous 6 A PC Collector Power Dissipation 130 W Tj Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.96 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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