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AOTF262L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOTF262L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOTF262L General Description Product Summary VDS ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 3.6mΩ RDS(ON) (at VGS=6V) < 4.1mΩ Applications 100% UIS Tested 100% Rg Tested Symbol V 60V N-Channel MOSFET Orderable Part Number Package Type Form Minimum Order Quantity 60V • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Absolute Maximum Ratings TA=25°C unless otherwise noted V Maximum Units AOTF262L TO-220F Tube 1000 • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 60 Parameter Drain-Source Voltage TO-220F Top View Bottom View G G S D D S G D S VDS VGS IDM IAS Avalanche energy L=0.1mH C EAS VDS Spike VSPIKE dv/dt TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC TA=25°C TA=70°C TC=25°C TC=100°C TC=25°C Avalanche Current C Continuous Drain Current Peak diode recovery dv/dt Thermal Characteristics Parameter Max TA=70°C 1.3 °C Units Junction and Storage Temperature Range -55 to 175 Typ PDSM W TA=25°C 2.1 Power Dissipation A Maximum Junction-to-Ambient A °C/W RθJA 12 48 15 W ID V A 115 A 340 IDSM 13.5 mJ 661 17.5 85 8 V/ns V A ±20 V Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 2.5 60 3 Power Dissipation B 25 TC=100°C 10µs PD 60 72 50 Gate-Source Voltage Pulsed Drain Current C 60 Drain-Source Voltage Continuous Drain Current Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 |
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