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BU323Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU323Z Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor BU323Z DESCRIPTION · With TO-220 packaging · Very high DC current gain · Monolithic darlington transistor with integrated antiparallel collector-emitter diode · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC-DC motor control · Electronic ignition · Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 3 A PC Collector Power Dissipation 150 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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