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MJ14002 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJ14002
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ14002 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJ14002 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJ14002 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
MJ14002
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 250mA, IB= 0
80
V
VCE(sat)1
Collector-Emitter Saturation Voltage
IC= 25A ,IB= 2.5A
1.0
V
VCE(sat)2
Collector-Emitter Saturation Voltage
IC= 50A ,IB= 5.0A
2.5
V
VCE(sat)3
Collector-Emitter Saturation Voltage
IC= 60A ,IB= 12A
3.0
V
VBE(sat)1
Base-Emitter Saturation Voltage
IC= 25A ,IB= 2.5A
2
V
VBE(sat)2
Base-Emitter Saturation Voltage
IC= 50A ,IB= 5.0A
3
V
VBE(sat)3
Base-Emitter Saturation Voltage
IC= 60A ,IB= 12A
4
V
ICBO
Collector Cutoff Current
VCB=80V, IE= 0
1.0
mA
ICEO
Collector Cutoff Current
VCE= 40V, IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 25A ; VCE=3V
30
hFE-2
DC Current Gain
IC= 50A ; VCE=3V
15
100
hFE-3
DC Current Gain
IC= 60A ; VCE=3V
5



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